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SIMS

What is SIMS?

SIMS (Secondary Ion Mass Spectrometry) is a highly sensitive surface analysis technique that uses a focused primary ion beam to sputter the top atomic layers of a sample. The sputtering process generates secondary ions, which are analyzed by a mass spectrometer to identify elements, isotopes, and molecular fragments.

SIMS is widely used for ultra-trace detection, surface contamination analysis, depth profiling, and chemical imaging, especially in semiconductor, thin film, and advanced materials applications.

What SIMS Can Help You Solve

  • Surface contamination identification (ionic residues, trace metals, organics on surfaces)

  • Ultra-trace elemental detection at ppm–ppb level (matrix and method dependent)

  • Depth profiling of multilayer thin films (dopants, diffusion, interfacial contamination)

  • Thin film / interface investigation (segregation, migration, barrier effectiveness)

  • Failure analysis support (unexpected species at interfaces causing delamination or electrical drift)

  • Comparative studies (before/after process, supplier comparison, cleaning effectiveness)

Typical Applications

  • Semiconductor & microelectronics: dopant profiles, mobile ion contamination, interface chemistry, residue checks

  • Thin films & coatings: composition vs depth, layer integrity, diffusion and intermixing

  • Batteries & energy materials: surface films/SEI-related species (project-dependent), impurity mapping

  • Metals & alloys: segregation, surface treatments, trace contaminants

  • Polymers & organics (ToF-SIMS): surface additives, contamination films, chemical imaging of organics

Capabilities & What You Receive

Measurement Modes (project-dependent)

  • Static SIMS / ToF-SIMS: surface-sensitive chemistry and molecular fragment information

  • Dynamic SIMS: high-sensitivity elemental/isotopic analysis and depth profiles

  • Depth profiling: concentration (or relative intensity) vs sputter time/depth

  • 2D/3D chemical imaging: spatial distribution of selected ions across an area (and through depth)

Outputs / Deliverables

  • Mass spectra (positive/negative ion as applicable)

  • Ion images / chemical maps (2D, optional 3D)

  • Depth profile plots for selected ions (interface positions and trends)

  • Peak/ion assignment summary and comparative conclusions

  • Optional: calibrated depth scale (requires thickness reference, crater measurement, or known sputter rate)

Sample Requirements

  • Sample types: wafers, thin films, coated coupons, metals, ceramics, polymers (mode dependent)

  • Size & mounting: flat samples preferred; provide dimensions and any mounting restrictions

  • Surface condition: clean, dry, minimal handling; avoid tape residue and fingerprints

  • Outgassing/volatility: samples must be compatible with vacuum; provide SDS if needed

  • Reference/control sample: strongly recommended for process comparison or contamination root-cause studies

  • Information to provide: target analytes (e.g., Na, K, Li, F, Cl, metals), layer stack (if known), and the question you want answered (surface vs depth vs imaging)

Workflow

  1. Requirement review (surface scan vs imaging vs depth profiling; target species; pass/fail criteria)

  2. Method planning (ion polarity, primary ion selection, analysis area, sputter plan)

  3. Sample handling & mounting (clean procedures to avoid contamination)

  4. Measurement (spectra and/or images; depth profile if requested)

  5. Data interpretation (peak assignment, interference checks, normalization/comparison)

  6. Report delivery (plots + findings + practical recommendations)

FAQs

ToF-SIMS is highly surface-sensitive and can provide molecular fragment information and chemical imaging. Dynamic SIMS is often used for high-sensitivity elemental/isotopic analysis and robust depth profiling.

It can, but true quantification typically requires standards, calibration, and careful control of matrix effects. Many projects use relative comparisons (normalized ion ratios) to answer process or contamination questions effectively.

Yes—SIMS is commonly used for ultra-trace alkali metals (Na, K, Li) and other contaminants important in electronics and reliability, with sensitivity depending on matrix and setup.

Depth range depends on material, sputter rate, and required resolution. SIMS can profile from nm-scale surface layers to microns (project-dependent). We can optimize for either high depth resolution or greater depth range.

SIMS is inherently destructive in the analyzed area due to sputtering. The affected region is localized (analysis crater), but this should be considered for limited or critical samples.

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