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TEM-STEM

What are TEM and STEM?

TEM (Transmission Electron Microscopy) and STEM (Scanning Transmission Electron Microscopy) are advanced electron microscopy techniques that reveal internal structure at nanometer to atomic-scale resolution. In TEM/STEM, a high-energy electron beam passes through an electron-transparent specimen (typically tens to hundreds of nm thick), enabling imaging of crystal structure, interfaces, defects, nanoparticles, and thin films beyond the capability of SEM or optical microscopy.

STEM can additionally provide strong Z-contrast imaging (composition-related contrast) and is commonly paired with EDS/EELS for nanoscale chemical and electronic information.

What TEM/STEM Can Help You Solve

  • Nanoscale structure visualization: grains, domains, pores, nanoparticles, interfaces

  • Defect and failure analysis: dislocations, voids, interfacial delamination origins

  • Thin film and multilayer characterization: layer thickness, roughness, interdiffusion clues

  • Crystal structure analysis: lattice imaging, phase identification, crystallinity

  • Particle morphology and size distribution at nanoscale

  • High-resolution comparison (before/after processing, aging, or environmental exposure)

Typical Applications

  • Semiconductor & microelectronics: gate stacks, interconnects, dielectrics, interfaces, defects

  • Batteries & energy materials: cathode/anode particles, coatings, degradation features (project-dependent)

  • Nanomaterials: nanoparticles, nanowires, 2D materials, catalysts

  • Metals & alloys: precipitates, grain boundaries, phase transformations

  • Ceramics & oxides: crystal defects, phase distribution, interfaces

  • Polymers & soft materials: fillers and interfaces (special preparation often required)

Capabilities & What You Receive

Imaging Modes (project-dependent)

  • Bright-field / Dark-field TEM: morphology and diffraction contrast

  • High-Resolution TEM (HRTEM): lattice fringes and atomic-scale features

  • STEM (BF/ADF/HAADF): scanning mode imaging; Z-contrast in HAADF

  • Selected Area Electron Diffraction (SAED): phase/crystallinity identification

  • EDS in TEM/STEM: nanoscale elemental analysis and mapping (semi-quantitative)

  • EELS (optional): light-element sensitivity, bonding/chemical state insights (availability dependent)

Deliverables

  • High-resolution images with scale bars and acquisition notes

  • If included: diffraction patterns and phase interpretation

  • If included: EDS spectra and elemental maps

  • A clear summary of key findings (interfaces, defects, phases, thicknesses, comparisons)

Sample Requirements & Preparation

TEM/STEM requires electron-transparent specimens, commonly prepared by:

  • FIB lamella cross-sections (typical for thin films, devices, coatings)

  • Ultramicrotomy (often for polymers/soft materials)

  • Powder dispersion on TEM grids (nanoparticles, catalysts)

What to Provide

  • Sample type and target area (surface, interface, specific defect location)

  • Layer stack or materials list (if known)

  • Any handling constraints (air sensitivity, contamination concerns, temperature limits)

  • For device cross-sections: mark the region of interest and share layout/coordinates if available

Workflow

  • Requirement review (imaging only vs diffraction vs EDS/EELS; target features; resolution needs)

  • Sample preparation plan (grid prep, cross-section, FIB, microtome—project dependent)

  • Specimen preparation & verification (thickness/quality check)

  • TEM/STEM imaging and analysis (multi-scale documentation)

  • Optional chemical/structural analysis (SAED, EDS mapping, EELS if requested)

  • Reporting (images/plots + interpretation + conclusions)

FAQs

TEM forms images using transmitted electrons in a broad beam, while STEM scans a focused probe across the sample. STEM is particularly strong for Z-contrast imaging (HAADF) and nanoscale elemental mapping.

Yes, TEM/STEM-EDS can provide point composition and elemental maps at nanoscale resolution. For bonding/valence or light elements, EELS may be available depending on project needs.

The sample must be thinned to electron transparency, and the prepared lamella/grid is typically consumed as a dedicated specimen. The electron beam can also alter very beam-sensitive materials, so conditions are optimized to minimize damage.

TEM/STEM can reach nanometer to atomic-scale resolution, depending on instrument configuration and sample quality. Real-world resolution is often limited by sample thickness, contamination, and stability.

Yes—TEM cross-sections are commonly used to measure layer thickness, interface quality, and local defects. Accurate measurement depends on correct cross-section orientation and preparation.

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