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TOF-SIMS

What is TOF-SIMS?

TOF-SIMS (Time-of-Flight Secondary Ion Mass Spectrometry) is an ultra-surface-sensitive technique that analyzes the top 1–3 nm of a material. A pulsed primary ion beam sputters the surface and generates secondary ions, which are separated by a time-of-flight mass analyzer to produce detailed spectra of elements, isotopes, and molecular fragments.

TOF-SIMS is especially powerful for detecting trace surface contamination, identifying organic films and additives, and performing high-resolution chemical imaging on complex materials.

What TOF-SIMS Can Help You Solve

  • Surface contamination identification (organic films, ionic residues, trace metals)

  • Cleaning effectiveness verification and process change comparison (before/after)

  • Root-cause support for adhesion loss, delamination, corrosion initiation, or electrical drift

  • Additive and residue analysis on polymer surfaces (mold release, plasticizers, surfactants)

  • Chemical imaging of particles/defects to locate and classify contaminants

  • Depth profiling (optional) to study layered structures, diffusion, and interfacial chemistry

Typical Applications

  • Semiconductor & electronics: organic/inorganic residues, mobile ions (Na/K), surface films, defect mapping

  • Thin films & coatings: surface chemistry, interfacial contamination, layer comparison

  • Polymers & adhesives: surface additives, migration/blooming, contamination films affecting bonding

  • Batteries & energy materials: surface films and degradation-related species (project-dependent)

  • Metals & corrosion studies: oxide/hydroxide species, inhibitors, trace contaminants

  • Particles/foreign materials: chemical mapping to identify source and composition

Capabilities & What You Receive

Key Measurement Modes (project-dependent)

  • Positive/negative ion spectra: broad chemical fingerprinting

  • High-mass-resolution spectra: molecular fragment identification and peak assignment support

  • 2D chemical imaging: spatial distribution of selected ions (surface maps)

  • 3D imaging / depth profiling (optional): ion intensity vs sputter time, and reconstructed volumes

  • Region-of-interest (ROI) analysis: compare spectra from defect vs non-defect areas

Deliverables

  • Full mass spectra (positive/negative as applicable)

  • Selected ion lists and peak assignment summary (project-dependent)

  • 2D ion images / chemical maps (and 3D outputs if requested)

  • Depth profile plots for selected ions (if included)

  • Clear comparison conclusions (sample A vs B, before vs after process)

Sample Requirements

  • Sample types: wafers, flat coupons, thin films, coated parts, polymers, metals, small components (vacuum compatible)

  • Surface condition: clean and dry; avoid fingerprints, tape residue, and dust

  • Size & mounting: flat samples are preferred; provide dimensions and any mounting restrictions

  • Vacuum compatibility: samples must be stable under high vacuum (provide SDS if needed)

  • Reference/control sample: strongly recommended for contamination or process comparison

  • Information to provide: target species (e.g., Na/K/Li, F/Cl, hydrocarbons, silicone), process history, and the exact question (identify film, compare cleaning, map defect, etc.)

Workflow

  • Requirement review (surface survey vs imaging vs depth profiling; target ions; acceptance criteria)

  • Method planning (polarity, analysis area, imaging resolution, sputter plan if needed)

  • Sample handling & mounting using clean procedures

  • Measurement (spectra + imaging; depth profiling optional)

  • Data interpretation (peak assignment, ROI comparison, interference checks, normalization)

  • Report delivery (plots/images + findings + recommended next steps)

FAQs

TOF-SIMS is extremely surface sensitive, typically probing only the top few nanometers. This makes it ideal for surface films and contamination that other bulk techniques may miss.

Yes. TOF-SIMS is particularly strong for organic fragments and can often differentiate classes of contaminants using characteristic ion patterns and imaging.

TOF-SIMS is usually not absolutely quantitative without calibration standards due to matrix effects. Most projects focus on relative comparison and strong qualitative identification.

Surface analysis uses very low dose and may be minimally destructive, but depth profiling/3D requires sputtering and is destructive in the analyzed area.

Both are surface techniques. XPS provides elemental composition and chemical states with quantitative capabilities (nm-scale depth). TOF-SIMS provides richer molecular fragment information and higher-resolution chemical imaging, often with greater sensitivity to trace organics and ions.

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