EBIC
What Is EBIC (Electron Beam Induced Current)?
EBIC (Electron Beam Induced Current) is an SEM/STEM-based electrical imaging technique that maps where an electron beam generates charge carriers (electron–hole pairs) and where those carriers are collected by internal electric fields (e.g., p–n junctions or Schottky junctions). The induced current is measured with an external circuit while the beam scans, creating an EBIC image that highlights junction locations, depletion regions, and electrically active defects.
What EBIC Is Used For
EBIC is commonly applied to semiconductor and photovoltaic investigations such as:
Defect localization: electrically active defects, recombination centers, leakage-related sites, junction anomalies
Junction visualization: locating p–n junctions / depletion regions in plan-view or cross-section
Process / lot comparisons (“what changed?”): good vs bad die/wafer comparisons to isolate the differentiator (project-dependent)
Carrier property studies (project-dependent): minority-carrier diffusion length and related collection behavior
Solar cell / PV characterization (project-dependent): collection efficiency and defect mapping in PV junctions
Why EBIC (vs. Standard SEM Imaging)?
Standard SEM signals (SE/BSE) primarily show topography and composition. EBIC adds an electrical contrast channel—so features like buried junctions or electrically active defects can appear even when topography looks normal. EBIC and SE imaging are often captured together for correlation.
Sample Types We Support
EBIC is typically used on (project-dependent):
Semiconductor devices: diodes, transistors, CMOS structures, power devices (as applicable)
Wafers / die / coupons: plan-view or cross-section samples prepared for ROI access
Photovoltaic devices: solar cells and related junction structures (project-dependent)
Failure analysis samples: good vs failed parts, suspected junction leakage sites, process-change lots (project-dependent)
Typical Workflows
Plan-View EBIC (Junction/Defect Mapping)
Best for: locating electrically active defects over an area
Scan defined regions; generate EBIC contrast maps
Correlate EBIC with SEM images to pinpoint ROI for follow-on analysis
Cross-Section EBIC (Layer/Interface & Junction Depth Context)
Best for: buried junction location, interface-related issues
Cross-section prep (mechanical or FIB, project-dependent)
EBIC imaging across the stack to visualize junction position and contrast behavior
EBIC-Guided Failure Analysis (Localization → Root Cause)
Best for: narrowing down where to cut/analyze next
Use EBIC to localize the electrical anomaly
Follow with FIB-SEM cross-section, TEM/STEM, EDS, or surface analysis as needed (project-dependent)
What You Receive
EBIC images/maps with scale bars and ROI markings
Correlated SEM imagery (when captured) for context
A clear interpretation summary: where the electrical activity/defect is, how it differs from the reference, and recommended next steps (project-dependent)
Sample Submission Guidelines
Please provide
Device type, stack/junction type (if known), and the question (leakage site? junction location? lot comparison?)
Any test history (fail mode, electrical symptoms, yield maps, coordinates)
Preferred analysis mode: plan-view vs cross-section (if known)
A reference/control sample whenever possible
Packaging tips
Protect sensitive surfaces (no rubbing/stacking; use gel-paks or clean holders)
Clearly label orientation and ROIs (photos are very helpful)
FAQs
Is EBIC destructive?
EBIC imaging is generally low-impact, but it uses an electron beam and can require contact/wiring and sometimes sample prep (e.g., cross-sectioning) depending on the goal (project-dependent).
Can EBIC find buried defects that optical/SEM can’t see?
Often yes—EBIC is specifically valued for locating electrically active defects and junction-related anomalies that may be invisible in purely topographic imaging.
What’s the difference between EBIC and EBAC?
EBIC primarily highlights junction electric fields / carrier collection in semiconductors, while EBAC is commonly used to map current pathways in conductors/metallization (opens/shorts), often with probing (project-dependent).
Do you need a good sample for comparison?
Strongly recommended. A known-good control makes “what changed?” conclusions faster and much more defensible.
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